• DocumentCode
    2194186
  • Title

    Transmission-line matrix (TLM) formulation of the non-stationary transient electromagnetic fields in a thin GaAs sample

  • Author

    Dindo, S.F. ; Ney, M.M. ; Harrison, R.G.

  • Author_Institution
    Lab. for Electromagn. & Microwaves, Ottawa Univ., Ont., Canada
  • fYear
    1994
  • fDate
    23-27 May 1994
  • Firstpage
    325
  • Abstract
    A new two-dimensional TLM procedure incorporates non-stationary electron velocities and electric fields into the computation of electromagnetic fields in submicron GaAs samples. An example demonstrates the transient electromagnetic field response to a short electric field pulse.<>
  • Keywords
    III-V semiconductors; electromagnetic field theory; electromagnetic fields; gallium arsenide; transients; transmission line theory; GaAs; electric fields; electromagnetic fields; nonstationary electron velocities; nonstationary transient electromagnetic fields; short electric field pulse; submicron GaAs samples; thin GaAs sample; transient electromagnetic field response; transmission-line matrix formulation; Electromagnetic fields; Electromagnetic transients; Electrons; Gallium arsenide; Transmission line matrix methods; Transmission lines;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 1994., IEEE MTT-S International
  • Conference_Location
    San Diego, CA, USA
  • ISSN
    0149-645X
  • Print_ISBN
    0-7803-1778-5
  • Type

    conf

  • DOI
    10.1109/MWSYM.1994.335313
  • Filename
    335313