High efficient C-band 27 W internally-matched GaAs FET for space application

Author

Kohno, M. ; Fujioka, T. ; Hayashi, K. ; Itoh, Y. ; Ikeda, I. ; Seino, K. ; Yamanouchi, M.

Author_Institution

Kita-Itami Works, Mitsubishi Electr. Corp., Hyogo, Japan

fYear

1994

fDate

23-27 May 1994

Firstpage

273

Abstract

A C-band 27 W internally-matched GaAs FET for space application has been developed. Bias conditions and output matching circuits were optimally designed by using the gate width of 18.9 mm/spl times/4 FET chips with stepped recess structure. As a result, power-added efficiencies(PAE) of 50/spl plusmn/3% and P2dB of 44.3/spl plusmn/0. 4dBm have been obtained in the frequency range from 3.7 to 4.2 GHz. For space applications, the reliability tests based on the European Space Agency Spec. (ESA) have been performed, and we have observed no failure during 3000 hrs under the RF overdrive operation at the condition of 5 dB compression. It was confirmed the our newly developed device had high enough reliability for space application.<>

Keywords

III-V semiconductors; Schottky gate field effect transistors; electric breakdown of solids; equivalent circuits; gallium arsenide; power transistors; reliability; solid-state microwave devices; 27 W; 3.7 to 4.2 GHz; 50 percent; C-band; GaAs; RF overdrive operation; SHF; bias conditions; internally-matched GaAs FET; output matching circuits; reliability; space application; stepped recess structure; Circuit testing; FETs; Gallium arsenide; Impedance matching; Performance evaluation; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1994., IEEE MTT-S International

Conference_Location

San Diego, CA, USA

ISSN

0149-645X

Print_ISBN

0-7803-1778-5

Type

conf

DOI

10.1109/MWSYM.1994.335318

Filename

335318