S-band 48% efficiency GaAs FET amplifier with 135 W output power for mobile communications satellite

Author

Ishii, K. ; Okamoto, T. ; Ishida, H. ; Tanibe, N. ; Dooi, Y. ; Maeda, H. ; Shigaki, M. ; Katoh, T.

Author_Institution

Space Commun. Res. Corp., Tokyo, Japan

fYear

1994

fDate

23-27 May 1994

Firstpage

269

Abstract

We have developed a solid-state power amplifier for mobile communications satellites. The amplifier´s peak output power exceeded 135 watts with an 48% power added efficiency S-band amplifier, which uses a harmonic controlled linear amplifier (HCLA) final stage. It has a linear gain of 54.0 dB under CW operation at 2.5 GHz. The carrier-to-third-order intermodulation ratio under two-tone operation is 22.5 dBc at a 3 dB output backoff. The overall unit size is 255/spl times/240/spl times/26 mm with a weight of 1900 g.<>

Keywords

III-V semiconductors; gallium arsenide; intermodulation; microwave amplifiers; mobile communication systems; power amplifiers; solid-state microwave circuits; transponders; 135 W; 2.5 GHz; 48 percent; 54 dB; CW operation; FET amplifier; GaAs; S-band; carrier-to-third-order intermodulation ratio; harmonic controlled linear amplifier; linear gain; mobile communications satellite; peak output power; solid-state power amplifier; two-tone operation; Artificial satellites; Communication system control; FETs; Gain; Gallium arsenide; Mobile communication; Power amplifiers; Power generation; Power system harmonics; Solid state circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1994., IEEE MTT-S International

Conference_Location

San Diego, CA, USA

ISSN

0149-645X

Print_ISBN

0-7803-1778-5

Type

conf

DOI

10.1109/MWSYM.1994.335319

Filename

335319