• DocumentCode
    2194493
  • Title

    A two-dimensional analysis of output overshoot mechanism in DAC current switch

  • Author

    Hamasaki, Toshihiko ; Wada, Tetsunori ; Kobori, Takashi

  • Author_Institution
    Toshiba Corp., Kawasaki, Japan
  • fYear
    1989
  • fDate
    18-19 Sep 1989
  • Firstpage
    148
  • Lastpage
    151
  • Abstract
    A detailed current switch output overshoot mechanism for a digital-to-analog converter (DAC) is analyzed, using a gate-level two-dimensional device simulator with input risetime and device topology as parameters. The importance of the carrier behavior around the emitter sidewall is stressed. The following conclusions are reached: (1) Output overshoot for a turn-on transistor rises in two steps. First the turn-on base-emitter voltage increases faster than input change and exceeds the final state value; then the emitter sidewall and corner regions become overcharged. Excess stored holes are discharged to the base center, which affects the settling time. (2) When the input risetime is too fast, the sidewall and the corner are further overcharged. When it is too slow, a fat region also becomes overcharged. In both cases, the settling time becomes long. (3) In the scaled transistor case, the settling time becomes shorter even if the input risetime is short and emitter-base voltage becomes higher, because the lateral potential transition delay in the flat region is shortened
  • Keywords
    bipolar integrated circuits; bipolar transistors; digital-analogue conversion; semiconductor device models; DAC current switch; base-emitter voltage; carrier behavior; device topology; digital-to-analog converter; emitter corner overcharging; emitter sidewall; emitter sidewall overcharging; emitter-base voltage; gate-level two-dimensional device simulator; input risetime; lateral potential transition delay; model; output overshoot mechanism; scaled transistor; scaling; settling time; turn-on transistor; two stage overshoot; two-dimensional analysis; Analytical models; Capacitors; Circuit simulation; Conductivity; Electrodes; Geometry; Resistors; Solid modeling; Switches; Switching circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar Circuits and Technology Meeting, 1989., Proceedings of the 1989
  • Conference_Location
    Minneapolis, MN
  • Type

    conf

  • DOI
    10.1109/BIPOL.1989.69479
  • Filename
    69479