Characterization of a 14" × 17" flat panel detector based on ion shower doped a-Si:H PIN diodes

Author

Kim, Hee Joon ; Cho, Gyuseong

Volume

2

fYear

2002

fDate

10-16 Nov. 2002

Firstpage

931

Abstract

In recent years it has become technically and economically feasible to use solid-state detector technology to display, store, and transfer X-ray images. In this paper we report the performance of a 33 × 41 cm² amorphous silicon flat panel detector based on an ion shower doped P-I-N photodiode/TFT array. The p-layer of diode is formed by an ion shower doping method instead of the conventional plasma enhanced chemical vapor deposition method. Measurements of X-ray imaging performances are reported with respect to the general imaging metrics, such as modulation transfer function, noise power spectrum, and detective quantum efficiency.

Keywords

X-ray detection; amorphous semiconductors; diagnostic radiography; elemental semiconductors; hydrogen; p-i-n photodiodes; semiconductor counters; silicon; thin film transistors; 14 to 17 inch; 33 to 41 cm; Si:H; X-ray images; detective quantum efficiency; flat panel detector; ion shower doped a-Si:H PIN diodes; modulation transfer function; noise power spectrum; photodiode/TFT array; Amorphous silicon; Flat panel displays; PIN photodiodes; Plasma measurements; Power generation economics; Solid state circuits; Thin film transistors; X-ray detection; X-ray detectors; X-ray imaging;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium Conference Record, 2002 IEEE

Print_ISBN

0-7803-7636-6

Type

conf

DOI

10.1109/NSSMIC.2002.1239476

Filename

1239476