Title :
Direct-Write Deposition of PZT Thick Films Derived from Modified Sol-Gel Process
Author :
Sun, J. ; Vittadello, M. ; Akdogan, E.K. ; Hall, A. ; Hagh, N. Marandian ; Safari, A.
Author_Institution :
Rutgers Univ., Piscataway
fDate :
July 30 2006-Aug. 3 2006
Abstract :
Lead zirconate titanate (PZT) thick films (6-70 mum) have been deposited on platinum coated alumina and silicon substrates using Micropentrade direct-write technique. Feedstock materials for Micropen deposition have been prepared by a modified sol-gel process in which different amounts of commercial PZT powder (15, 20, 25, 30 vol%) were dispersed in a stable PZT sol to achieve low temperature heat treatment conditions (700degC). The effects of the substrate, intermediate sol layer, film thickness, PZT content, and Micropen parameters on the resulting multi-layer PZT films have been investigated. The films using 15 vol% paste on Pt/Si substrate showed dielectric constant in the range 540-870, dielectric loss between 4.1 and 4.5 % at 1 kHz, remanent polarization (Pr) of 7-12 muC/cm2, and coercive field (Ec) of 24-30 kV/cm.
Keywords :
coercive force; dielectric losses; dielectric polarisation; heat treatment; lead compounds; permittivity; sol-gel processing; thick films; zirconium compounds; PZT; coercive field; dielectric constant; dielectric loss; direct-write deposition; low temperature heat treatment; micropen direct-write technique; modified sol-gel process; multi-layer PZT films; remanent polarization; thick films; Dielectric losses; Dielectric substrates; Heat treatment; Platinum; Powders; Semiconductor films; Silicon; Temperature; Thick films; Titanium compounds; Micropen direct-write; PZT; sol-gel; thick films;
Conference_Titel :
Applications of ferroelectrics, 2006. isaf '06. 15th ieee international symposium on the
Conference_Location :
Sunset Beach, NC
Print_ISBN :
978-1-4244-1331-7
Electronic_ISBN :
1099-4734
DOI :
10.1109/ISAF.2006.4387832