Title :
Characterization of HV-IGBT for high-power inverter applications
Author :
Lai, Jih-Sheng ; Leslie, Leonard ; Ferrell, Jeremy ; Nergaard, Troy
Author_Institution :
Future Energy Electron. Center, Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
Abstract :
This paper presents an optically isolated high-power full-bridge inverter based upon high-voltage integrated gate bipolar transistors. The inverter switching turn-on and -off losses were characterized for thermal design consideration. Design target is for 5 MW power level. An HV-IGBT based full-bridge module was fabricated for device characterization and continuous power testing. The gate driver is optically isolated with desaturation and over-voltage protection and is tested extensively for reliability concerns. Conduction and switching losses were characterized for inverter loss modeling, and the entire inverter loss under sinusoidal pulse-width-modulation operation was projected based on the device characterization results. The three-phase inverter efficiency was then evaluated for the thermal management consideration.
Keywords :
PWM invertors; insulated gate bipolar transistors; losses; overvoltage protection; semiconductor device packaging; semiconductor device reliability; semiconductor device testing; switching convertors; thermal management (packaging); 5 MW; HV-IGBT; conduction loss; device characterization; full-bridge high-power inverter; high-voltage integrated gate bipolar transistor; optical isolation; over-voltage protection; power testing; pulse-width-modulation operation; reliability; switching loss; thermal design; thermal management; Bipolar transistors; Driver circuits; Integrated optics; Optical losses; Optical pulses; Protection; Pulse width modulation inverters; Switching loss; Testing; Thermal management;
Conference_Titel :
Industry Applications Conference, 2005. Fourtieth IAS Annual Meeting. Conference Record of the 2005
Print_ISBN :
0-7803-9208-6
DOI :
10.1109/IAS.2005.1518335
