Title : 
High-temperature silicon carbide (SiC) power switches in multichip power module (MCPM) applications
         
        
            Author : 
Homberger, J.M. ; Mounce, S.D. ; Schupbach, R.M. ; Lostetter, A.B. ; Mantooth, H. Alan
         
        
            Author_Institution : 
Arkansas Power Electron. Int. Inc., Fayetteville, AR, USA
         
        
        
        
        
        
            Abstract : 
Arkansas Power Electronics International, Inc, (APEI, Inc.) and University of Arkansas researchers have developed a novel, highly miniaturized motor drive capable of operation in excess of 250 °C. The high-temperature multichip power module (MCPM) integrates silicon carbide (SiC) JFET power transistors with high-temperature MOS silicon-on-insulator (SOI) control electronics into a single, highly miniaturized and compact power package. This paper will outline the design philosophy behind the high-temperature MCPM, illustrate thermal modeling results of the package, and present the results of prototype testing (demonstrating functionality).
         
        
            Keywords : 
junction gate field effect transistors; motor drives; multichip modules; power semiconductor switches; semiconductor device packaging; semiconductor device testing; silicon compounds; silicon-on-insulator; wide band gap semiconductors; 250 C; Arkansas Power Electronics International Inc; Arkansas University; MCPM; SiC; high-temperature MOS silicon-on-insulator; high-temperature electronics; high-temperature packaging; high-temperature power switch; miniaturized motor drive; multichip power module; power package; prototype testing; silicon carbide JFET power transistor; thermal modeling; Consumer electronics; Electronic packaging thermal management; FETs; MOSFETs; Multichip modules; Power electronics; Silicon carbide; Silicon on insulator technology; Switches; Temperature;
         
        
        
        
            Conference_Titel : 
Industry Applications Conference, 2005. Fourtieth IAS Annual Meeting. Conference Record of the 2005
         
        
        
            Print_ISBN : 
0-7803-9208-6
         
        
        
            DOI : 
10.1109/IAS.2005.1518338