Title :
Silicon carbide power semiconductor module development for a high temperature 10 kW AC drive
Author :
Katsis, Dimosthenis ; Geil, Bruce ; Griffin, Timothy ; Koebke, Gail ; Kaplan, Steven ; Ovrebo, Gregory ; Bayne, Stephen
Author_Institution :
US Army Res. Lab., Adelphi, MD, USA
Abstract :
A silicon carbide power module has been developed to demonstrate a high-temperature, 10 kW AC drive application. Several goals for this development include temperature dependent parameter evaluation of parallel-connected transistors and junction barrier Schottky diodes at 150 °C operating temperature. Next, design of a high-thermal conductivity substrate to cool the modules based on predicted losses. Finally the integration into a variable speed AC drive using a DSP-based V/F motor controller. Test results for the 10 kW AC drive are provided to demonstrate power module performance up to 180 °C.
Keywords :
AC motor drives; Schottky diodes; cooling; digital signal processing chips; frequency control; machine control; machine testing; power bipolar transistors; silicon compounds; substrates; thermal conductivity; variable speed drives; voltage control; wide band gap semiconductors; DSP V-F motor controller; SiC; cooling; high temperature AC drive; high-thermal conductivity substrate; junction barrier Schottky diode; parallel-connected transistor; parameter evaluation; power BJT; power semiconductor module; silicon carbide; variable speed AC drive; AC motors; Electric breakdown; Laboratories; Multichip modules; Schottky diodes; Semiconductor diodes; Silicon carbide; Temperature dependence; Testing; Thermal conductivity;
Conference_Titel :
Industry Applications Conference, 2005. Fourtieth IAS Annual Meeting. Conference Record of the 2005
Print_ISBN :
0-7803-9208-6
DOI :
10.1109/IAS.2005.1518339
