Monolithic integrated 75 GHz oscillator with high output power using a pseudomorphic HFET

Author

Bangert, A. ; Schlechtweg, M. ; Reinert, W. ; Haydl, W.H. ; Hulsmann, A. ; Kohler, K.

Author_Institution

Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany

fYear

1994

fDate

23-27 May 1994

Firstpage

135

Abstract

Recently, there has been growing interest in MMICs for circuit applications in the 76 to 77 GHz frequency range allocated for automotive systems in Europe. We have designed and fabricated an oscillator for a frequency of 75 GHz, using a quasi linear approach combined with a simple matching procedure to achieve maximum output power. The MMICs were fabricated using pseudomorphic GaAs HFETs with mushroom gates (0.16 /spl mu/m length, 2/spl times/25 /spl mu/m width) as the active devices. The output power of the oscillator was 8 mW at 75 GHz with a drain bias of V/sub DS/=3V. To our knowledge, this is the highest output power from a single stage HFET oscillator at this frequency.<>

Keywords

III-V semiconductors; MMIC; automotive electronics; gallium arsenide; microwave oscillators; 0.16 micron; 75 GHz; 8 mW; GaAs; MMICs; automotive systems; drain bias; matching procedure; mushroom gates; output power; pseudomorphic HFET; quasi linear approach; single stage HFET oscillator; Automotive engineering; Circuits; Europe; Frequency; HEMTs; MMICs; MODFETs; Oscillators; Power generation; Radio spectrum management;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1994., IEEE MTT-S International

Conference_Location

San Diego, CA, USA

ISSN

0149-645X

Print_ISBN

0-7803-1778-5

Type

conf

DOI

10.1109/MWSYM.1994.335347

Filename

335347