Fully monolithic Ku and Ka-band GaInP/GaAs HBT wideband VCOs

Author

Blanck, H. ; Delage, S.L. ; Cassette, S. ; Chartier, E. ; Floriot, D. ; Poisson, M.-A. ; Brylinski, C. ; Pons, D. ; Roux, P. ; Bourne, P. ; Quentin, P.

Author_Institution

Lab. Central de Recherches, Thomson-CSF, Orsay, France

fYear

1994

fDate

23-27 May 1994

Firstpage

127

Abstract

A family of fully monolithic VCOs utilizing GaInP/GaAs HBTs are presented for the first time. They operate at 14 GHz and 28 GHz with tuning bandwidths ranging from 10.7% to 19.6%. Output powers vary between -9dBm and +3 dBm with an integrated 6 dB attenuator to reduce pulling. The fabrication yield is higher than 50%. On-wafer measurements show a very small dispersion, and good agreement with the small signal simulations.<>

Keywords

III-V semiconductors; MMIC; bipolar integrated circuits; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; microwave oscillators; variable-frequency oscillators; 14 GHz; 28 GHz; GaInP-GaAs; GaInP/GaAs; HBT; Ka-band; Ku-band; dispersion; fabrication yield; on-wafer measurements; output powers; small signal simulations; tuning bandwidths; wideband VCOs; Attenuators; Bandwidth; Dispersion; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Power generation; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1994., IEEE MTT-S International

Conference_Location

San Diego, CA, USA

ISSN

0149-645X

Print_ISBN

0-7803-1778-5

Type

conf

DOI

10.1109/MWSYM.1994.335349

Filename

335349