SiC GTO thyristor model for HVDC interface

The development of semiconductor devices is vital for the growth of power electronic systems. Modern technologies like voltage source converter (VSC) based HVDC transmission has been made possible with the advent of power semiconductor devices like GTO thyristors and their high power handling capability. Silicon carbide is the most advanced material among the available wide band gap semiconductors and most SiC devices are currently in the transition from research to manufacturing phase. This paper presents the modeling and design of a loss model for a 4H-SiC GTO thyristor device. The device loss model has been developed based on the device physics and device operation, and simulations have been conducted for various operating conditions. The loss model was integrated in the HVDC transmission system model to study the effects of the Si and SiC devices on the system. The paper focuses on the comparison of Si devices with SiC devices in terms of efficiency and cost savings for a HVDC transmission system.