DocumentCode
2195178
Title
Analysis of the on-state resistance influenced by the on-state current
Author
Baojie Wang ; Kefu Liu ; Jian Qiu
Author_Institution
Inst. for Electr. Light Sources, Fudan Univ., Shanghai, China
fYear
2012
fDate
3-7 June 2012
Firstpage
649
Lastpage
652
Abstract
The performance of photoconductive semiconductor switches (PCSSs) has superiority, since it has ultrafast rise-time, low jitter, good synchronization and high electric-field strength. The on-state resistance is an important parameter of the PCSS performance. In this paper, a research about the influence of bias voltage and on-state current to the on-state resistance is described. From the results we got the relationship among the elements and the on-state resistance. The on-state resistance falls with the increase of the bias voltage and the on-state current. The results were discussed and explanations were given at last.
Keywords
electric fields; electric resistance; photoconducting switches; power semiconductor switches; synchronisation; PCSS; bias voltage; electric field strength; on-state current; on-state resistance analysis; photoconductive semiconductor switch; synchronization; ultrafast rise time; on-state current; on-state resistance; photoconductive semiconductor switches (PCSSS);
fLanguage
English
Publisher
ieee
Conference_Titel
Power Modulator and High Voltage Conference (IPMHVC), 2012 IEEE International
Conference_Location
San Diego, CA
Print_ISBN
978-1-4673-1222-6
Type
conf
DOI
10.1109/IPMHVC.2012.6518828
Filename
6518828
Link To Document