Title :
Analysis of the on-state resistance influenced by the on-state current
Author :
Baojie Wang ; Kefu Liu ; Jian Qiu
Author_Institution :
Inst. for Electr. Light Sources, Fudan Univ., Shanghai, China
Abstract :
The performance of photoconductive semiconductor switches (PCSSs) has superiority, since it has ultrafast rise-time, low jitter, good synchronization and high electric-field strength. The on-state resistance is an important parameter of the PCSS performance. In this paper, a research about the influence of bias voltage and on-state current to the on-state resistance is described. From the results we got the relationship among the elements and the on-state resistance. The on-state resistance falls with the increase of the bias voltage and the on-state current. The results were discussed and explanations were given at last.
Keywords :
electric fields; electric resistance; photoconducting switches; power semiconductor switches; synchronisation; PCSS; bias voltage; electric field strength; on-state current; on-state resistance analysis; photoconductive semiconductor switch; synchronization; ultrafast rise time; on-state current; on-state resistance; photoconductive semiconductor switches (PCSSS);
Conference_Titel :
Power Modulator and High Voltage Conference (IPMHVC), 2012 IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4673-1222-6
DOI :
10.1109/IPMHVC.2012.6518828
