Monolithic power amplifiers covering 70-113 GHz

Author

Wang, H. ; Samoska, L. ; Gaier, T. ; Peralta, A. ; Liao, H.H. ; Chen, Y.C. ; Nishimoto, M. ; Lai, R.

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

fYear

2000

fDate

10-13 June 2000

Firstpage

39

Lastpage

42

Abstract

A number of monolithic W-band power amplifiers (PAs) have been developed for local oscillators of the Far Infrared and Submillimeter Telescope (FIRST). These PA chips include three driver and three power amplifiers covering most of the W-band, i.e., the frequency ranges of 72-81, 90-101, and 100-113 GHz. Each driver amplifier and power amplifier provides at least 20 and 22 dBm (160 mW), respectively in the frequency range it covers. The 100-113 GHz power amplifier has a peak power of greater than 250 mW (25 dBm) at 105 GHz, which is the best output power performance for a monolithic amplifier above 100 GHz to date. These monolithic chips are fabricated using 0.1-/spl mu/m AlGaAs-InGaAs-GaAs pseudomorphic T-gate power HEMTs on a 2-mil GaAs substrate.

Keywords

HEMT integrated circuits; MMIC power amplifiers; field effect MIMIC; integrated circuit design; millimetre wave power amplifiers; power HEMT; power integrated circuits; 0.1 micron; 160 mW; 250 mW; 70 to 113 GHz; AlGaAs-InGaAs-GaAs; EHF; FIRST; Far Infrared/Submillimeter Telescope; GaAs; GaAs substrate; LO application; MM-wave ICs; PHEMTs; T-gate power HEMTs; W-band power amplifiers; driver amplifier; local oscillators; monolithic power amplifiers; pseudomorphic HEMTs; Broadband amplifiers; Driver circuits; Frequency; Gallium arsenide; HEMTs; Local oscillators; MMICs; MODFETs; Power amplifiers; Power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2000. Digest of Papers. 2000 IEEE

Conference_Location

Boston, MA, USA

ISSN

1529-2517

Print_ISBN

0-7803-6280-2

Type

conf

DOI

10.1109/RFIC.2000.854412

Filename

854412