DocumentCode
2195242
Title
A high-performance 85-119 GHz GCPW MMIC low noise amplifier
Author
Radisic, V. ; Pobanz, C. ; Ming Hu ; Micovic, M. ; Wetzel, M. ; Janke, P. ; Yu, M. ; Ngo, C. ; Dawson, D. ; Matloubian, M.
Author_Institution
LLC, HRL Lab., Malibu, CA, USA
fYear
2000
fDate
10-13 June 2000
Firstpage
43
Lastpage
46
Abstract
In this paper, a high-performance four-stage MMIC low noise amplifier based on InP HEMT and grounded CPW (GCPW) technology is presented. The LNA exhibits a measured gain of 20/spl plusmn/3 dB from 85 to 119 GHz, a 33% bandwidth. The noise figure is 3.7 dB at 93 GHz. The measured amplifier P/sub 1 dB/ is 10 mW at 98 GHz.
Keywords
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; coplanar waveguides; field effect MIMIC; indium compounds; integrated circuit noise; millimetre wave amplifiers; 10 mW; 20 dB; 3.7 dB; 85 to 119 GHz; CPW MMIC LNA; EHF; InP; InP HEMT; MM-wave IC; MMIC low noise amplifier; four-stage MMIC; grounded CPW technology; Coplanar waveguides; Frequency; Gain; HEMTs; Indium phosphide; Integrated circuit measurements; Low-noise amplifiers; MMICs; Noise figure; Semiconductor device modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio Frequency Integrated Circuits (RFIC) Symposium, 2000. Digest of Papers. 2000 IEEE
Conference_Location
Boston, MA, USA
ISSN
1529-2517
Print_ISBN
0-7803-6280-2
Type
conf
DOI
10.1109/RFIC.2000.854413
Filename
854413
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