A novel RFIC for UHF oscillators

Author

Rohde, U.L.

Author_Institution

Synergy Microwave Corp., Patterson, NJ, USA

fYear

2000

fDate

10-13 June 2000

Firstpage

53

Lastpage

56

Abstract

In the past, several successful attempts were made in designing low phase noise oscillators, including noise canceling techniques. Since silicon and silicon germanium transistors with high gain are not available in PNP polarity, it has been difficult to find appropriate biasing schemes. This paper shows a novel circuit using NPN transistors, which meets all the required goals and has been validated in discrete form and is currently in production at the Motorola silicon germanium foundry.

Keywords

UHF integrated circuits; UHF oscillators; bipolar analogue integrated circuits; circuit tuning; feedback oscillators; integrated circuit design; integrated circuit noise; phase noise; voltage-controlled oscillators; NPN transistors; RFIC; UHF oscillators; low phase noise oscillators; n-p-n transistors; noise canceling techniques; 1f noise; Circuit noise; Frequency; Noise figure; Noise level; Operational amplifiers; Oscillators; Phase noise; Radiofrequency integrated circuits; Signal to noise ratio;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2000. Digest of Papers. 2000 IEEE

Conference_Location

Boston, MA, USA

ISSN

1529-2517

Print_ISBN

0-7803-6280-2

Type

conf

DOI

10.1109/RFIC.2000.854415

Filename

854415