DocumentCode :
2195292
Title :
AlGaAs/GaAs ridge waveguide lasers on semi-insulating substrate with airbridged contacts with 21 GHz modulation response frequency
Author :
Haozhe Dong ; Gopinath, A.
Author_Institution :
Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN, USA
fYear :
1994
fDate :
23-27 May 1994
Firstpage :
53
Abstract :
Multiple quantum-well AlGaAs/GaAs ridge waveguide lasers have been fabricated on a semi-insulating substrate with airbridged top contacts. The 3 dB frequency response has been measured to be 21 GHz.<>
Keywords :
III-V semiconductors; S-parameters; aluminium compounds; frequency response; gallium arsenide; optical modulation; optical waveguides; rectangular waveguides; semiconductor lasers; 21 GHz; AlGaAs-GaAs; MQW lasers; airbridged contacts; modulation response frequency; multiple quantum-well; ridge waveguide lasers; semi-insulating substrate; Frequency measurement; Frequency response; Gallium arsenide; Quantum well lasers; Waveguide lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location :
San Diego, CA, USA
ISSN :
0149-645X
Print_ISBN :
0-7803-1778-5
Type :
conf
DOI :
10.1109/MWSYM.1994.335363
Filename :
335363
Link To Document :
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