Title :
A fully-monolithic SiGe differential voltage-controlled oscillator for 5 GHz wireless applications
Author :
Plouchart, J.-O. ; Ainspan, H. ; Soyuer, M. ; Ruehli, A.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
A fully integrated and differential SiGe VCO was designed for 5 GHz wireless applications. The measured phase noise is -98 dBc/Hz at 100 kHz offset off the 5 GHz carrier. It has a tuning range of 12.3% with a control voltage from 0 to 3 V, and a figure of merit of more than -180 dBc/Hz, The current drawn from 3 V is 5 mA for the core and 2.2 mA for the output buffers.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; MMIC oscillators; circuit tuning; integrated circuit noise; microwave links; phase noise; semiconductor materials; voltage-controlled oscillators; wireless LAN; 0 to 3 V; 2.2 mA; 5 GHz; 5 mA; SHF wireless applications; SiGe; SiGe differential VCO; fully-monolithic VCO; phase noise; tuning range; voltage-controlled oscillator; Circuit simulation; Frequency; Germanium silicon alloys; Inductors; Phase noise; Silicon germanium; Transceivers; Transformers; Varactors; Voltage-controlled oscillators;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2000. Digest of Papers. 2000 IEEE
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-6280-2
DOI :
10.1109/RFIC.2000.854416
