A fully integrated SiGe bipolar 1.4 GHz Bluetooth voltage-controlled oscillator

Author

Klepser, B.-U.H. ; Kucera, J.

Author_Institution

Infineon Technol., Munich, Germany

fYear

2000

fDate

10-13 June 2000

Firstpage

61

Lastpage

64

Abstract

A 2.4 GHz fully monolithic voltage-controlled oscillator for the Bluetooth wireless data communication standard is presented for the first time using a commercially available SiGe bipolar technology. An oscillator phase noise of -129 dBc/Hz is achieved at 3 MHz offset, with a tuning range of 500 MHz and a supply current of 6 mA at 3 V.

Keywords

Ge-Si alloys; UHF integrated circuits; UHF oscillators; bipolar analogue integrated circuits; circuit tuning; heterojunction bipolar transistors; integrated circuit noise; phase noise; telecommunication standards; voltage-controlled oscillators; 2.4 GHz; 3 V; 6 mA; Bluetooth VCO; Bluetooth wireless data communication standard; RFIC; SiGe; SiGe HBT; SiGe bipolar VCO; UHF IC; commercially available SiGe bipolar technology; fully monolithic VCO; oscillator phase noise; voltage-controlled oscillator; Bluetooth; Communication standards; Current supplies; Data communication; Germanium silicon alloys; Phase noise; Silicon germanium; Tuning; Voltage-controlled oscillators; Wireless communication;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2000. Digest of Papers. 2000 IEEE

Conference_Location

Boston, MA, USA

ISSN

1529-2517

Print_ISBN

0-7803-6280-2

Type

conf

DOI

10.1109/RFIC.2000.854417

Filename

854417