Title :
A fully integrated SiGe bipolar 1.4 GHz Bluetooth voltage-controlled oscillator
Author :
Klepser, B.-U.H. ; Kucera, J.
Author_Institution :
Infineon Technol., Munich, Germany
Abstract :
A 2.4 GHz fully monolithic voltage-controlled oscillator for the Bluetooth wireless data communication standard is presented for the first time using a commercially available SiGe bipolar technology. An oscillator phase noise of -129 dBc/Hz is achieved at 3 MHz offset, with a tuning range of 500 MHz and a supply current of 6 mA at 3 V.
Keywords :
Ge-Si alloys; UHF integrated circuits; UHF oscillators; bipolar analogue integrated circuits; circuit tuning; heterojunction bipolar transistors; integrated circuit noise; phase noise; telecommunication standards; voltage-controlled oscillators; 2.4 GHz; 3 V; 6 mA; Bluetooth VCO; Bluetooth wireless data communication standard; RFIC; SiGe; SiGe HBT; SiGe bipolar VCO; UHF IC; commercially available SiGe bipolar technology; fully monolithic VCO; oscillator phase noise; voltage-controlled oscillator; Bluetooth; Communication standards; Current supplies; Data communication; Germanium silicon alloys; Phase noise; Silicon germanium; Tuning; Voltage-controlled oscillators; Wireless communication;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2000. Digest of Papers. 2000 IEEE
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-6280-2
DOI :
10.1109/RFIC.2000.854417
