Title :
A novel planar double-balanced 6-18 GHz MMIC mixer
Author :
Brinlee, W.R. ; Pavio, A.M. ; Varian, K.R.
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
Abstract :
A novel planar monolithic double-balanced mixer has been demonstrated which exhibits low conversion loss, good compression and isolation characteristics, and low spurious responses. This has been achieved for LO and RF signals in the 6 to 18 GHz frequency range with an IF bandwidth from DC to 2.5 GHz. It is fabricated using standard 0.5 /spl mu/m MESFET technology on ion-implanted low-noise, low-current GaAs material. Occupying a size of only 0.050/spl times/0.100/spl times/0.006 in. (1.27/spl times/2.54/spl times/0.15 mm), it is the smallest known planar double-balanced MMIC mixer to accomplish this level of performance.<>
Keywords :
III-V semiconductors; MMIC; distributed parameter networks; field effect integrated circuits; gallium arsenide; impedance matching; mixers (circuits); 0.006 in; 0.050 in; 0.100 in; 0.15 mm; 0.5 micron; 1.27 mm; 2.5 GHz; 2.54 mm; 6 to 18 GHz; GaAs; IF bandwidth; LO signals; MESFET technology; MMIC mixer; RF signals; compression; conversion loss; ion-implanted low-noise low-current GaAs material; isolation; planar monolithic double-balanced mixer; spurious responses; Bandwidth; Frequency; Gallium arsenide; Isolation technology; MESFETs; MMICs; Mixers;
Conference_Titel :
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-1778-5
DOI :
10.1109/MWSYM.1994.335372
