Title :
A 3.2 V, 45% efficient, novel Class AB+C CDMA MMIC power amplifier using quasi enhancement mode PHEMTs
Author :
Cao, J. ; Wang, X.W. ; Quek, C.K. ; Singh, R. ; Nakamura, H.
Author_Institution :
Inst. of Microelectron., Singapore
Abstract :
This paper presents a novel power amplifier (PA) configuration (Class AB+C) which allows low quiescent current and thereby high PAE at low output power levels to be achieved without compromising high power linearity. The designed 800 MHz CDMA PA using quasi enhancement PHEMT process attained over 45% PAE, 0.8-watt output power and 33 dB gain at -43 dBc adjacent channel power rejection (ACPR), at a supply voltage of 3.2 V. The total quiescent current consumed is only 52 mA. In contrast, the conventional Class AB configuration required 82 mA to achieve similar performance.
Keywords :
HEMT integrated circuits; MMIC power amplifiers; UHF integrated circuits; UHF power amplifiers; adjacent channel interference; code division multiple access; 0.8 W; 3.2 V; 33 dB; 45 percent; 52 mA; 800 MHz; Class AB+C power amplifier; MMIC power amplifier; PAE; adjacent channel power rejection; high power linearity; output power levels; quasi enhancement PHEMT process; quasi enhancement mode PHEMTs; quiescent current; total quiescent current; FETs; High power amplifiers; Linearity; MMICs; Multiaccess communication; PHEMTs; Power amplifiers; Power generation; Switches; Switching circuits;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2000. Digest of Papers. 2000 IEEE
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-6280-2
DOI :
10.1109/RFIC.2000.854424