DocumentCode
2195529
Title
A single supply very high power and efficiency integrated PHEMT amplifier for GSM applications
Author
Huin, F. ; Duvanaud, C. ; Serru, V. ; Robin, F. ; Leclerc, E.
Author_Institution
ACCO SA, Saint-Germain-en-Laye, France
fYear
2000
fDate
10-13 June 2000
Firstpage
101
Lastpage
104
Abstract
The power PHEMT technology presented allows one to achieve high power (35.5 dBm) and PAE (60%) for a low drain bias of 3.5 volts and a gate bias of zero volts. For such operating conditions, analyses are conducted to adjust the load termination at the signal harmonics.
Keywords
HEMT integrated circuits; MMIC amplifiers; cellular radio; harmonics; transceivers; 3.5 V; 60 percent; GSM applications; PAE; drain bias; gate bias; integrated PHEMT amplifier; load termination; operating conditions; signal harmonics; Frequency; GSM; High power amplifiers; Indium gallium arsenide; Low voltage; Molecular beam epitaxial growth; PHEMTs; Power amplifiers; Power supplies; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio Frequency Integrated Circuits (RFIC) Symposium, 2000. Digest of Papers. 2000 IEEE
Conference_Location
Boston, MA, USA
ISSN
1529-2517
Print_ISBN
0-7803-6280-2
Type
conf
DOI
10.1109/RFIC.2000.854426
Filename
854426
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