DocumentCode
2195623
Title
A 1.9 GHz low voltage CMOS power amplifier for medium power RF applications
Author
Giry, A. ; Fourniert, J.-M. ; Pons, M.
Author_Institution
STMicroelectron., Crolles, France
fYear
2000
fDate
10-13 June 2000
Firstpage
121
Lastpage
124
Abstract
This paper describes the design methodology and measured performances of a monolithic two-stage RF power amplifier realized in a 0.35 /spl mu/m CMOS technology. Under 2.5 V supply, good linearity is achieved and an output power of 23.5 dBm with an associated PAE of 35% is obtained at 19 GHz. The obtained performances give an insight into CMOS potentialities for medium power RF amplification.
Keywords
CMOS analogue integrated circuits; UHF integrated circuits; UHF power amplifiers; integrated circuit design; 0.35 micron; 1.9 GHz; 2.5 V; 35 percent; LV CMOS power amplifier; design methodology; low voltage operation; medium power RF applications; monolithic RF power amplifier; two-stage power amplifier; CMOS technology; Design methodology; Linearity; Low voltage; Performance evaluation; Power amplifiers; Power generation; Power measurement; Radio frequency; Radiofrequency amplifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio Frequency Integrated Circuits (RFIC) Symposium, 2000. Digest of Papers. 2000 IEEE
Conference_Location
Boston, MA, USA
ISSN
1529-2517
Print_ISBN
0-7803-6280-2
Type
conf
DOI
10.1109/RFIC.2000.854430
Filename
854430
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