DocumentCode :
2195661
Title :
A novel approach to statistical modeling using cumulative probability distribution fitting
Author :
Bandler, J.W. ; Biernacki, R.M. ; Cai, Q. ; Chen, S.H.
Author_Institution :
Dept. of Electr. & Comput. Eng., McMaster Univ., Hamilton, Ont., Canada
fYear :
1994
fDate :
23-27 May 1994
Firstpage :
385
Abstract :
A novel approach to statistical modeling is presented. The statistical model is directly extracted by fitting the cumulative probability distributions (CPDs) of the model responses to those of the measured data. This new technique is based on a solid mathematical foundation and, therefore, should prove more reliable and robust than the existing methods. The approach is illustrated by statistical MESFET modeling based on a physics-oriented model which combines the modified Khatibzadeh and Trew model and the Ladbrooke model (KTL). The approach is compared with the established parameter extraction/postprocessing approach (PEP) in the context of yield verification.<>
Keywords :
Schottky gate field effect transistors; probability; semiconductor device models; solid-state microwave devices; statistical analysis; Ladbrooke model; MESFET modeling; cumulative probability distribution fitting; model responses; modified Khatibzadeh/Trew model; physics-oriented model; statistical modeling; yield verification; Data mining; MESFETs; Parameter extraction; Probability distribution; Robustness; Solids;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location :
San Diego, CA, USA
ISSN :
0149-645X
Print_ISBN :
0-7803-1778-5
Type :
conf
DOI :
10.1109/MWSYM.1994.335413
Filename :
335413
Link To Document :
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