A CAD procedure for the double-layer broadside-coupled Marchand balun

Author

Schwindt, R. ; Nguyen, C.

Author_Institution

Dept. of Electr. Eng., Texas A&M Univ., College Station, TX, USA

fYear

1994

fDate

23-27 May 1994

Firstpage

389

Abstract

New design equations and a new computer-aided design (CAD) procedure for the double-layer Marchand balun, constructed of broadside-coupled microstrip lines, are presented, based on the derived scattering parameters and a circuit synthesis technique. The developed procedure can determine accurately and quickly both initial electrical and physical parameters of the balun for achieving a desired performance, as well as provide an accurate and simple analysis. Calculated results for a GaAs MMIC balun designed by this procedure are compared to a general full-wave analysis, and good performance and agreement are obtained.<>

Keywords

MMIC; S-parameters; circuit CAD; distributed parameter networks; gallium arsenide; impedance matching; microstrip lines; CAD procedure; GaAs; GaAs MMIC balun; broadside-coupled microstrip lines; circuit synthesis technique; design equations; double-layer broadside-coupled Marchand balun; full-wave analysis; scattering parameters; Circuit synthesis; Design automation; Equations; Gallium arsenide; Impedance matching; MMICs; Microstrip; Performance analysis; Scattering parameters;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1994., IEEE MTT-S International

Conference_Location

San Diego, CA, USA

ISSN

0149-645X

Print_ISBN

0-7803-1778-5

Type

conf

DOI

10.1109/MWSYM.1994.335414

Filename

335414