Title :
A base-band to RF BiCMOS transmitter RFIC for dual-band CDMA/AMPS wireless handsets
Author :
Sahota, K. ; Gard, K. ; Walker, B. ; Szabo, S. ; Wenjun Su ; Zeisel, E.
Author_Institution :
Qualcomm Inc., San Diego, CA, USA
Abstract :
A single chip, base-band to RF, BiCMOS transmitter RFIC (RFT3100) for dual-band CDMA/AMPS wireless handsets is presented. The RFIC contains base-band I/Q modulator, UHF VCO buffer, IF PLL, VCO, IF and RF VGAs, image rejection RF upconverter, dual driver amplifiers for cellular and PCS bands, and a three wire serial interface to control the chip. The chip operates from a 2.7 to 3.3 V supply, a temperature range of -30 to 85/spl deg/C, and is packaged in a 32 lead 5/spl times/5 mm bump chip carrier (BCC) package. The chip is fabricated using a 18 GHz (analog NPN ft), 0.5 um BiCMOS process.
Keywords :
BiCMOS analogue integrated circuits; UHF integrated circuits; cellular radio; code division multiple access; radio transmitters; telephone sets; -30 to 85 C; 0.5 micron; 2.7 to 3.3 V; BCC package; BiCMOS transmitter RFIC; IF PLL; PCS bands; RFT3100; UHF VCO buffer; base-band I/Q modulator; base-band to RF transmitter; bump chip carrier package; dual driver amplifiers; dual-band CDMA/AMPS wireless handsets; image rejection RF upconverter; three wire serial interface; BiCMOS integrated circuits; Dual band; Multiaccess communication; Packaging; Phase locked loops; Radio frequency; Radiofrequency integrated circuits; Telephone sets; Transmitters; Voltage-controlled oscillators;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2000. Digest of Papers. 2000 IEEE
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-6280-2
DOI :
10.1109/RFIC.2000.854432
