Title :
Monolithic LNAs up to 10 GHz in a production-near 65 GHz f/sub max/ silicon bipolar technology
Author :
Zoschg, D. ; Wilhelm, W. ; Bock, J. ; Knapp, H. ; Wurzer, M. ; Aufinger, K. ; Wohlmuth, H.-D. ; Scholtz, A.L.
Author_Institution :
Corp. Res., Infineon Technol. AG, Munich, Germany
Abstract :
Monolithic LNAs for frequencies of 2, 6, and 10 GHz have been fabricated in production-near silicon bipolar technology (0.4 /spl mu/m/65 GHz, f/sub max/). Measured results in 50 /spl Omega/ noise figure and gain are 1.1 dB/28 dB at 1.9 GHz, 1.8 dB/26 dB at 5.6 GHz, 2.8 dB/21.1 dB at 9.5 GHz, and 2.5 dB/16.6 dB at 10 GHz. These noise results are state of the art for homojunction silicon bipolar technologies and are able to compete with the best results for minimum noise figures published for SiGe technologies.
Keywords :
MMIC amplifiers; UHF amplifiers; UHF integrated circuits; bipolar MMIC; bipolar analogue integrated circuits; elemental semiconductors; integrated circuit noise; silicon; 0.4 micron; 1.1 to 2.8 dB; 16.6 to 28 dB; 2 to 10 GHz; 65 GHz; MMIC; RFIC; Si; Si bipolar technology; UHF IC; low noise amplifiers; monolithic LNAs; production-near bipolar technology; 3G mobile communication; Gain measurement; Germanium silicon alloys; Low-noise amplifiers; Noise figure; Noise measurement; Paper technology; RLC circuits; Radio frequency; Silicon germanium;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2000. Digest of Papers. 2000 IEEE
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-6280-2
DOI :
10.1109/RFIC.2000.854433
