DocumentCode :
2195762
Title :
A Novel Depletion Mode High Voltage Isolation Device
Author :
Mikhalev, Vladimir ; Smith, Michael
Author_Institution :
Dept. of Process R&D, Micron Technol. Inc., Boise, ID, USA
fYear :
2010
fDate :
16-16 April 2010
Firstpage :
1
Lastpage :
3
Abstract :
A novel depletion mode high voltage isolation device is presented. It consists of a narrow n- resistor covered with a grounded metal field plate. This device will pass low voltages, but will block high voltages. It has potential application to isolate a NAND memory array from periphery low voltage circuitry, and has the benefit that it can be made more compact than a standard MOSFET device and can be integrated into the process without adding or changing process steps.
Keywords :
NAND circuits; flash memories; power aware computing; NAND memory array; depletion mode high voltage isolation device; grounded metal field plate; low voltage circuitry; narrow n-resistor; Circuit simulation; Circuit testing; Degradation; Life testing; Research and development; SPICE; Switches; Switching circuits; Tunneling; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronics and Electron Devices (WMED), 2010 IEEE Workshop on
Conference_Location :
Boise, ID
ISSN :
1947-3842
Print_ISBN :
978-1-4244-6572-9
Type :
conf
DOI :
10.1109/WMED.2010.5453749
Filename :
5453749
Link To Document :
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