Title :
FET parameter orthogonalization with principal components
Author :
Carroll, J. ; Whelan, K. ; Pritchett, S. ; Bridges, D.
Author_Institution :
Texas Instrum. Inc., USA
Abstract :
A new method for representing the statistical variation of FET Equivalent Circuit Parameters (ECPs) is presented. This method utilizes a statistical technique known as principal components and provides an efficient method for statistically representing the means, standard deviations, and correlations of the FET ECPs. Applications of this technique include simulation of process variation using Monte Carlo analysis as well as model optimization. The modeling methodology can be easily implemented into existing commercial CAD simulators.<>
Keywords :
Monte Carlo methods; circuit analysis computing; equivalent circuits; field effect transistors; semiconductor device models; CAD simulators; Equivalent Circuit Parameters; FET parameter orthogonalization; Monte Carlo analysis; correlations; means; model optimization; principal components; simulation; standard deviations; statistical technique; Analytical models; Circuit simulation; Equivalent circuits; FETs; Monte Carlo methods;
Conference_Titel :
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-1778-5
DOI :
10.1109/MWSYM.1994.335419
