Title :
Fully differential dual-band image reject receiver in SiGe BiCMOS
Author :
Imbornone, J. ; Mourant, J.-M. ; Tewksbury, T.
Author_Institution :
IBM Corp., Lowell, MA, USA
Abstract :
A fully differential, dual-band, image reject receiver chip is described. SiGe BiCMOS (ft=45 GHz) enables high dynamic range with NF=2.8/4.1 dB (900 MHz/1.8 GHz) including requisite balun loss, IIP3 >-17 dBm, Gp=22 dB, and image rejection >40 dB at 2.7V (87mW).
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; UHF integrated circuits; baluns; integrated circuit noise; radio receivers; semiconductor materials; 1.8 GHz; 2.7 V; 2.8 dB; 4.1 dB; 45 GHz; 87 mW; 900 MHz; BiCMOS; IIP3; SiGe; dynamic range; fully differential dual-band image reject receiver; image rejection; requisite balun loss; BiCMOS integrated circuits; Distributed control; Dual band; Electronics packaging; Filters; Germanium silicon alloys; Impedance matching; Noise figure; Radio frequency; Silicon germanium;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2000. Digest of Papers. 2000 IEEE
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-6280-2
DOI :
10.1109/RFIC.2000.854436
