DocumentCode
2195821
Title
The performance limiting factors as RF MOSFETs scale down
Author
Wu, Y.H. ; Chin, A. ; Liang, C.S. ; Wu, C.C.
Author_Institution
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear
2000
fDate
10-13 June 2000
Firstpage
151
Lastpage
155
Abstract
The measured RF performance of 0.5, 0.25, and 0.18 /spl mu/m MOSFETs gradually saturates as scaling down occurs, which can be explained by the derived analytical equation and simulation. The source-drain overlap capacitance, C/sub gd/, and non-quasi-static effect are the main factors but scale much slower than L/sub g/.
Keywords
MOSFET; UHF field effect transistors; capacitance; microwave field effect transistors; semiconductor device measurement; semiconductor device models; 0.18 to 0.5 micron; RF MOSFETs; analytical equation; measured RF performance; non-quasi-static effect; performance limiting factors; simulation; source-drain overlap capacitance; Analytical models; Equations; Equivalent circuits; Frequency measurement; Frequency response; Integrated circuit measurements; MOSFETs; Performance analysis; Probes; Radio frequency;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio Frequency Integrated Circuits (RFIC) Symposium, 2000. Digest of Papers. 2000 IEEE
Conference_Location
Boston, MA, USA
ISSN
1529-2517
Print_ISBN
0-7803-6280-2
Type
conf
DOI
10.1109/RFIC.2000.854437
Filename
854437
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