Title :
The performance limiting factors as RF MOSFETs scale down
Author :
Wu, Y.H. ; Chin, A. ; Liang, C.S. ; Wu, C.C.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
The measured RF performance of 0.5, 0.25, and 0.18 /spl mu/m MOSFETs gradually saturates as scaling down occurs, which can be explained by the derived analytical equation and simulation. The source-drain overlap capacitance, C/sub gd/, and non-quasi-static effect are the main factors but scale much slower than L/sub g/.
Keywords :
MOSFET; UHF field effect transistors; capacitance; microwave field effect transistors; semiconductor device measurement; semiconductor device models; 0.18 to 0.5 micron; RF MOSFETs; analytical equation; measured RF performance; non-quasi-static effect; performance limiting factors; simulation; source-drain overlap capacitance; Analytical models; Equations; Equivalent circuits; Frequency measurement; Frequency response; Integrated circuit measurements; MOSFETs; Performance analysis; Probes; Radio frequency;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2000. Digest of Papers. 2000 IEEE
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-6280-2
DOI :
10.1109/RFIC.2000.854437
