Trade-off performance properties of pHEMT-based LNAs vs. temperature for VSAT applications

Author

Caddemi, A. ; Livreri, P. ; Sannino, M.

Author_Institution

Dipartimento di Ingegneria Elettrica, Palermo Univ., Italy

Volume

1

fYear

1995

fDate

24-27 Jul 1995

Firstpage

19

Abstract

The optimum trade-off performance of an LNA for VSAT applications based on a commercial pHEMT series have been investigated vs. temperature, starting from a noisy model fitted to the measured devices´s scattering parameters and noise figure values. As a result, it has been noted that with decreasing temperature from room value, the combined minimum noise figure-power gain (Fmin-Gass), reported on the microwave low-noise device´s data sheets, doesn´t represent a useful working condition for an optimum LNA design

Keywords

HEMT circuits; S-parameters; microwave power amplifiers; microwave receivers; satellite ground stations; semiconductor device models; semiconductor device noise; semiconductor device testing; temperature; LNA design; VSAT applications; data sheets; microwave low-noise device; minimum noise figure-power gain; noise figure; noisy model; pHEMT based LNA; scattering parameters; temperature; trade-off performance properties; Acoustic reflection; Circuit noise; Electrical resistance measurement; Frequency; Microwave transistors; Noise figure; PHEMTs; Performance evaluation; Scattering parameters; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Optoelectronics Conference, 1995. Proceedings., 1995 SBMO/IEEE MTT-S International

Conference_Location

Rio de Janeiro

Print_ISBN

0-7803-2674-1

Type

conf

DOI

10.1109/SBMOMO.1995.509591

Filename

509591