Ultra low power GaAs MMIC low noise amplifier for smart antenna combining at 5.2 GHz

Author

Ellinger, F. ; Lott, U. ; Bachtold, W.

Author_Institution

Lab. for Electromagnetic Fields & Microwave Electron., Swiss Federal Inst. of Technol., Zurich, Switzerland

fYear

2000

fDate

10-13 June 2000

Firstpage

157

Lastpage

159

Abstract

A switchable GaAs MMIC cascode low noise amplifier for smart antenna combining at 5.2 GHz (HIPERLAN) is presented using a standard 0.6 /spl mu/m MESFET process. A gain of 12.3 dB and a noise figure of 2.4 dB are measured, drawing only 1.2 mA from a 1 V supply. A gain/P/sub dc/ figure of merit of 10 dB/mW is achieved, which to our knowledge is the highest ever reported at C-band.

Keywords

III-V semiconductors; MESFET integrated circuits; MMIC amplifiers; active antenna arrays; adaptive antenna arrays; gallium arsenide; low-power electronics; power combiners; 0.6 micron; 1 V; 1.2 mA; 12.3 dB; 2.4 dB; 5.2 GHz; C-band; GaAs; HIPERLAN; III-V semiconductors; MESFET process; MMIC low noise amplifier; cascode amplifier; gain/P/sub dc/ figure of merit; low-power electronics; smart antenna combining; switchable amplifier; Circuit noise; Electromagnetic interference; Energy consumption; FETs; Gallium arsenide; Low-noise amplifiers; MMICs; Microwave antennas; Noise measurement; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2000. Digest of Papers. 2000 IEEE

Conference_Location

Boston, MA, USA

ISSN

1529-2517

Print_ISBN

0-7803-6280-2

Type

conf

DOI

10.1109/RFIC.2000.854438

Filename

854438