A Comprehensive Study on Nanomechanical Properties of Various SiO2-Based Dielectric Films

Author

Wei, Guohua ; Varghese, Sony ; Beaman, Kevin ; Vasilyeva, Irina ; Mendiola, Tom ; Carswell, Andrew ; Fillmore, David ; Lu, Shifeng

Author_Institution

Micron Technol., Inc., Boise, ID, USA

fYear

2010

fDate

16-16 April 2010

Firstpage

1

Lastpage

4

Abstract

This paper studies the nanomechanical properties, including hardness and Young´s modulus (both in a dry condition and in deionized water), fracture toughness, cohesive strength and scratch resistance of eight commonly used SiO₂-based dielectric films, Boron Phosphosilicate Glass (BPSG), BPSG with Rapid Thermal Processing (RTP), Phosphosilicate Glass (PSG), Spin-On Dielectric (SOD), Plasma Enhanced Chemical Vapor Deposition (PECVD) Tetraethyl Orthosilicate (TEOS), high aspect ratio oxide (O3-TEOS), High Density Plasma Oxide (HDP), and Silane Oxide. Significant differences were found among these films. The effects of the nanomechanical properties on dielectric film reliability and CMP process are discussed.

Keywords

Young´s modulus; boron compounds; borosilicate glasses; chemical mechanical polishing; dielectric thin films; fracture toughness; hardness; nanomechanics; organic compounds; phosphorus compounds; phosphosilicate glasses; plasma CVD coatings; rapid thermal processing; silicon compounds; B₂O₃-P₂O₅-SiO₂; BPSG; CMP process; O3-TEOS; PECVD; PSG; RTP; SiO₂-based dielectric films; TEOS; Young´s modulus; boron phosphosilicate glass; chemical mechanical planarization; cohesive strength; deionized water; dry condition; film reliability; fracture toughness; hardness; high aspect ratio oxide; high density plasma oxide; nanomechanical properties; plasma enhanced chemical vapor deposition; rapid thermal processing; scratch resistance; silane oxide; spin-on dielectrics; tetraethyl orthosilicate; Boron; Dielectric films; Glass; Plasma chemistry; Plasma density; Plasma materials processing; Plasma properties; Rapid thermal processing; Thermal resistance; Water;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics and Electron Devices (WMED), 2010 IEEE Workshop on

Conference_Location

Boise, ID

ISSN

1947-3842

Print_ISBN

978-1-4244-6572-9

Type

conf

DOI

10.1109/WMED.2010.5453755

Filename

5453755