DocumentCode :
2195916
Title :
A Comprehensive Study on Nanomechanical Properties of Various SiO2-Based Dielectric Films
Author :
Wei, Guohua ; Varghese, Sony ; Beaman, Kevin ; Vasilyeva, Irina ; Mendiola, Tom ; Carswell, Andrew ; Fillmore, David ; Lu, Shifeng
Author_Institution :
Micron Technol., Inc., Boise, ID, USA
fYear :
2010
fDate :
16-16 April 2010
Firstpage :
1
Lastpage :
4
Abstract :
This paper studies the nanomechanical properties, including hardness and Young´s modulus (both in a dry condition and in deionized water), fracture toughness, cohesive strength and scratch resistance of eight commonly used SiO2-based dielectric films, Boron Phosphosilicate Glass (BPSG), BPSG with Rapid Thermal Processing (RTP), Phosphosilicate Glass (PSG), Spin-On Dielectric (SOD), Plasma Enhanced Chemical Vapor Deposition (PECVD) Tetraethyl Orthosilicate (TEOS), high aspect ratio oxide (O3-TEOS), High Density Plasma Oxide (HDP), and Silane Oxide. Significant differences were found among these films. The effects of the nanomechanical properties on dielectric film reliability and CMP process are discussed.
Keywords :
Young´s modulus; boron compounds; borosilicate glasses; chemical mechanical polishing; dielectric thin films; fracture toughness; hardness; nanomechanics; organic compounds; phosphorus compounds; phosphosilicate glasses; plasma CVD coatings; rapid thermal processing; silicon compounds; B2O3-P2O5-SiO2; BPSG; CMP process; O3-TEOS; PECVD; PSG; RTP; SiO2-based dielectric films; TEOS; Young´s modulus; boron phosphosilicate glass; chemical mechanical planarization; cohesive strength; deionized water; dry condition; film reliability; fracture toughness; hardness; high aspect ratio oxide; high density plasma oxide; nanomechanical properties; plasma enhanced chemical vapor deposition; rapid thermal processing; scratch resistance; silane oxide; spin-on dielectrics; tetraethyl orthosilicate; Boron; Dielectric films; Glass; Plasma chemistry; Plasma density; Plasma materials processing; Plasma properties; Rapid thermal processing; Thermal resistance; Water;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronics and Electron Devices (WMED), 2010 IEEE Workshop on
Conference_Location :
Boise, ID
ISSN :
1947-3842
Print_ISBN :
978-1-4244-6572-9
Type :
conf
DOI :
10.1109/WMED.2010.5453755
Filename :
5453755
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2195916
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