Title :
Fullband Study of Ultra-Scaled Electron and Hole SiGe Nanowire FETs
Author :
Paul, Abhijeet ; Mehrotra, Saumitra ; Luisier, Mathieu ; Klimeck, Gerhard
Author_Institution :
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
Abstract :
Ultra-scaled SiGe nanowire FETs (NWFETs) are an attractive candidate in achieving faster p-type devices compared to Silicon. This work investigates the performance of SiGe nanowire FETs (NWFETs) using a Virtual Crystal Approximation (VCA) method based on an atomistic Tight-Binding (TB) model. The electronic structure calculation is self- consistently coupled to a 2D Poisson solver. The spatial charge and current distribution in these NWFETs strongly depend on the Ge% as well as on the channel orientation. We predict an improvement in both SiGe n and p FETs in terms of I ON and gate delay (¿D)compared to Silicon. For Ge > 80% the <110> oriented channels show better performance compared to the <100> SiGe n and p-FETs .
Keywords :
Ge-Si alloys; Poisson equation; approximation theory; field effect transistors; nanowires; semiconductor materials; 2D Poisson solver; SiGe; atomistic tight-binding model; electronic structure calculation; ultra-scaled electron; ultra-scaled nanowire FET; virtual crystal approximation method; Capacitance; Charge carrier processes; Computer networks; Current distribution; Electrostatics; FETs; Germanium silicon alloys; MOSFETs; Nanoscale devices; Silicon germanium;
Conference_Titel :
Microelectronics and Electron Devices (WMED), 2010 IEEE Workshop on
Conference_Location :
Boise, ID
Print_ISBN :
978-1-4244-6572-9
DOI :
10.1109/WMED.2010.5453756
