A family of monolithic inductor-varactor SiGe-HBT VCOs for 20 GHz to 30 GHz LMDS and fiber-optic receiver applications

Author

Voinigescu, S.P. ; Marchesan, D. ; Copeland, M.A.

Author_Institution

Nortel Networks, Ottawa, Ont., Canada

fYear

2000

fDate

10-13 June 2000

Firstpage

173

Lastpage

177

Abstract

A family of low-phase noise, monolithic inductor-varactor SiGe-HBT VCOs in the 20 GHz to 30 GHz band was fabricated in a production SiGe technology. The unbuffered differential VCOs have 10-15% tuning range and deliver -3 to 2 dBm directly into each of the 50 /spl Omega/ loads, and 0 dBm differentially. Phase noise is as low as -101 dBc/Hz at 1 MHz from the 20 GHz carrier and -87 dBc/Hz at 100 kHz from the 26 GHz carrier. The VCO core draws 10 mA from a 5 V supply.

Keywords

Ge-Si alloys; MMIC oscillators; bipolar MMIC; circuit tuning; heterojunction bipolar transistors; inductors; integrated circuit noise; microwave links; optical receivers; phase noise; semiconductor materials; varactors; voltage-controlled oscillators; 10 mA; 20 to 30 GHz; 5 V; LMDS applications; SiGe; SiGe HBT VCOs; fiber-optic receiver applications; low-phase noise; monolithic inductor-varactor VCOs; production SiGe technology; Circuit topology; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Inductors; Phase noise; Power generation; Silicon germanium; Tuning; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2000. Digest of Papers. 2000 IEEE

Conference_Location

Boston, MA, USA

ISSN

1529-2517

Print_ISBN

0-7803-6280-2

Type

conf

DOI

10.1109/RFIC.2000.854442

Filename

854442