Title :
Role of Mn Doping on the Electromechanical Properties of [001] Domain Engineered Single crystals
Author :
Guennou, M. ; Augier, C. ; Dammak, H. ; Thi, M. Pham ; Gaucher, P.
Author_Institution :
Ecole Centrale Paris, Chatenay-Malabry
fDate :
July 30 2006-Aug. 3 2006
Abstract :
We studied the influence of Mn doping on electromechanical properties of PZN-xPT with x = 7% and 9%. Single crystals oriented along the [111], [011] and [001] directions were poled by a "field cooling" process with an applied electric field of 1 kV/cm. It is shown that Mn doping has a significant influence on the single domain crystals in both cases. It modifies the phase symmetry of single domain PZN-7PT from orthorhombic to rhombohedral. It reduces permittivity perpendicular to polarization direction of single domain PZN-9PT by about 40%. This change in the properties of the bulk material is the main cause for the decrease of permittivity observed in [001] poled PZN-9PT crystals. Further effects of doping on the properties of [001] domain engineered crystals are a decrease of the piezoelectric coefficient, a hardening of the material and an increase of the mechanical quality factor.
Keywords :
dielectric polarisation; doping; electric domains; lead compounds; manganese; permittivity; piezoelectricity; relaxor ferroelectrics; Mn doping influence; PbZrO3NbO3-PbTiO3:Mn; electromechanical properties; hardening; mechanical quality factor; permittivity; phase symmetry; piezoelectric coefficient; polarization; poling; single domain crystals; Cooling; Crystalline materials; Crystals; Doping; Mechanical factors; Permittivity; Phase change materials; Piezoelectric materials; Piezoelectric polarization; Q factor; PZN-PT; domain engineering; manganese; piezoelectric; single crystal;
Conference_Titel :
Applications of ferroelectrics, 2006. isaf '06. 15th ieee international symposium on the
Conference_Location :
Sunset Beach, NC
Print_ISBN :
978-1-4244-1331-7
Electronic_ISBN :
1099-4734
DOI :
10.1109/ISAF.2006.4387882
