Title :
An 18-21 GHz InP DHBT linear microwave Doherty amplifier
Author :
Kobayashi, K.W. ; Oki, A.K. ; Gutierrez-Aitken, A. ; Chin, P. ; Li Yang ; Kaneshiro, E. ; Grossman, P.C. ; Sato, K. ; Block, T.R. ; Yen, H.C. ; Streit, D.C.
Author_Institution :
Electron. & Technol. Div., TRW Inc., Redondo Beach, CA, USA
Abstract :
This work describes the first demonstration of an InP DHBT MMIC Doherty amplifier at K-band. When combined with InP DHBTs, the Doherty amplifier achieves a record linear PAE of 20% under a strict C/IM3 linearity ratio of 30 dBc while producing a Pout of 20.1 dBm. This benchmarks 3 dB greater Pout and 4% higher linear PAE than achieved with a PHEMT MMIC Doherty amplifier at Ku-band for the same C/IM3 linearity. Compared to its own linear "class A" bias performance, the Doherty amplifier achieves an 11 dB improvement in C/IM3 for the same Pout and slightly greater efficiency. The superior linearity of the InP DHBT Doherty amplifier approach is attractive for satellite and MM-wave communication systems.
Keywords :
III-V semiconductors; MMIC amplifiers; bipolar MMIC; heterojunction bipolar transistors; indium compounds; integrated circuit design; 18 to 21 GHz; 20 percent; C/IM3 linearity ratio; InP; InP DHBT MMIC; K-band operation; MM-wave communication systems; linear microwave Doherty amplifier; satellite communication systems; DH-HEMTs; Frequency; Gain measurement; Indium phosphide; K-band; Linearity; Microwave amplifiers; Operational amplifiers; PHEMTs; Radiofrequency amplifiers;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2000. Digest of Papers. 2000 IEEE
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-6280-2
DOI :
10.1109/RFIC.2000.854443
