Abstract :
The following topics are dealt with: modified floating gate, NAND flash memory, carrier mobility, ion implantation, continuous anodic oxidation, differential Hall effect, dielectric films, high voltage isolation device, nanowire FET, sigma-delta modulator, all digital multiplying DLL, precision digital delay line, proximity communication, DC coupled sensor amplifier, offset cancellation, column-parallel ADC technology, and CMOS image sensor.
Keywords :
CMOS image sensors; Hall effect; NAND circuits; carrier mobility; delay lines; flash memories; ion implantation; sigma-delta modulation; CMOS image sensor; DC coupled sensor amplifier; NAND flash memory; all digital multiplying DLL; carrier mobility; column-parallel ADC technology; continuous anodic oxidation; dielectric films; differential Hall effect; high voltage isolation device; ion implantation; modified floating gate; nanowire FET; offset cancellation; precision digital delay line; proximity communication; sigma-delta modulator;
