Title :
A 2.488 Gb/s GaAs 1:4/1:16 demultiplexer IC with skip circuit for SONET STS-12/48 systems
Author :
Abrão, Taufik ; Correra, Fatima S.
Author_Institution :
Lab. de Microelectron., Sao Paulo Univ., Brazil
Abstract :
A 1:4/1:16 demultiplexer IC with an integrated skip circuit has been successfully designed and fabricated employing SCFL standard cells based on 1 μm MESFET foundry technology. The circuit was designed to operate at up to 2.5 Gb/s with low power dissipation. The demultiplexer employs a tree type architecture based on 1:2 demux blocks using tristage flip-flops. A new skip circuit without re-timing was proposed and integrated in the demultiplexer for frame alignment. The proposed skip circuit demonstrated its effectiveness and the IC operated either as a 1:4 or a 1:16 demultiplexer at up to 2.5 Gb/s with a power dissipation of 1 W. This IC is applicable for signal processing on SONET STS-12/48 optical communication systems
Keywords :
III-V semiconductors; MESFET integrated circuits; SONET; cellular arrays; demultiplexing equipment; digital signal processing chips; field effect logic circuits; flip-flops; gallium arsenide; 1 W; 1 micron; 1:4/1:16 demultiplexer IC; 2.5 Gbit/s; GaAs; III-V semiconductors; MESFET foundry technology; SCFL standard cells; SONET STS-12/48 optical communication systems; SONET STS-12/48 systems; frame alignment; low power dissipation; signal processing; skip circuit; tree type architecture; tristage flip-flops; Flip-flops; Foundries; Gallium arsenide; Integrated circuit technology; MESFET integrated circuits; Optical fiber communication; Optical signal processing; Photonic integrated circuits; Power dissipation; SONET;
Conference_Titel :
Microwave and Optoelectronics Conference, 1995. Proceedings., 1995 SBMO/IEEE MTT-S International
Conference_Location :
Rio de Janeiro
Print_ISBN :
0-7803-2674-1
DOI :
10.1109/SBMOMO.1995.509598
