A mixed Si and GaAs chip set for millimeter-wave automotive radar front-ends

Author

Siweris, H.J. ; Werthof, A. ; Tischer, H. ; Grave, T. ; Werthmann, H. ; Rasshofer, R.H. ; Kellner, W.

Author_Institution

Wireless Products, Infineon Technol., Munich, Germany

fYear

2000

fDate

10-13 June 2000

Firstpage

191

Lastpage

194

Abstract

A chip set consisting of three GaAs HEMT MMICs (voltage-controlled oscillator, medium power amplifier, subharmonic mixer) and a discrete Si Schottky mixer diode has been developed for 77 GHz automotive radar systems. It facilitates the realization of a high performance millimeter-wave radar front-end with a minimum amount of chip area and, consequently, low production costs.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC mixers; MMIC oscillators; MMIC power amplifiers; Schottky diode mixers; elemental semiconductors; field effect MIMIC; gallium arsenide; radar equipment; road vehicle radar; silicon; voltage-controlled oscillators; 77 GHz; GaAs; HEMT MMICs; Schottky mixer diode; Si; chip area; medium power amplifier; millimeter-wave automotive radar; production costs; radar front-ends; subharmonic mixer; voltage-controlled oscillator; Automotive engineering; Costs; Gallium arsenide; HEMTs; MMICs; Millimeter wave radar; Power amplifiers; Production; Schottky diodes; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2000. Digest of Papers. 2000 IEEE

Conference_Location

Boston, MA, USA

ISSN

1529-2517

Print_ISBN

0-7803-6280-2

Type

conf

DOI

10.1109/RFIC.2000.854446

Filename

854446