Title :
A novel HBT distributed amplifier design topology based on attenuation compensation techniques
Author :
Kobayashi, K.W. ; Esfandiari, R. ; Oki, A.K.
Author_Institution :
Electron. & Technol. Div., TRW Inc., Redondo Beach, CA, USA
Abstract :
We report on a novel HBT distributed amplifier (DA) design which achieves the highest gain-bandwidth product (GBP) per device f/sub T/ so far reported for HBT distributed amplifiers. This paper introduces a new design topology for HBT DA´s which incorporates attenuation compensation on both the input and output transmission lines. A four-section HBT DA using this novel topology achieves a gain of 15 dB and a 3-dB bandwidth of >15 GHz. The resulting gain-bandwidth product is 84 GHz. When normalized to the device f/sub T/, this DA achieves the highest normalized gain-bandwidth-product figure of merit for HBT DA´s, /spl ap/3.67, which is a 55% improvement over existing state-of-the-art performance. The new device configuration offers 15-20 do more available gain for the device unit cell and results in gain-bandwidth product improvements of 200% over a conventional common-emitter DA configuration.<>
Keywords :
MMIC; bipolar integrated circuits; compensation; equivalent circuits; heterojunction bipolar transistors; microwave amplifiers; network synthesis; network topology; wideband amplifiers; 15 GHz; 15 dB; HBT distributed amplifier; MMIC; amplifier design topology; attenuation compensation techniques; gain-bandwidth product; Attenuation; Bandwidth; Distributed amplifiers; Gain; Heterojunction bipolar transistors; Topology; Transmission lines;
Conference_Titel :
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-1778-5
DOI :
10.1109/MWSYM.1994.335429