Title :
A monolithic 2-52 GHz HEMT matrix distributed amplifier in coplanar waveguide technology
Author :
Heilig, R. ; Hollmann, D. ; Baumann, G.
Author_Institution :
Alcatel SEL, Pforzheim, Germany
Abstract :
This paper discusses design, performance and fabrication of a two stages four sections GaAs monolithic matrix distributed amplifier covering the frequency range from 2 to 52 GHz. The achieved gain is about 9 dB and the return loss is better than 12 dB. The devices we used are 2/spl times/25 /spl mu/m, 0.2 /spl mu/m recessed gate AlGaAs HEMTs and the coplanar waveguide was the propagation medium for this broadband amplifier. The chip dimensions of the amplifier including the bias networks are 2.0 mm/spl times/2.5 mm.<>
Keywords :
III-V semiconductors; MMIC; aluminium compounds; field effect integrated circuits; gallium arsenide; high electron mobility transistors; microwave amplifiers; wideband amplifiers; 0.2 micron; 12 dB; 2 to 52 GHz; 9 dB; AlGaAs; CPW technology; GaAs; HEMT matrix distributed amplifier; MIMIC; MM-wave IC; bias networks; broadband amplifier; coplanar waveguide; fabrication; monolithic amplifier; recessed gate AlGaAs HEMTs; two stage configuration; Broadband amplifiers; Coplanar waveguides; Distributed amplifiers; Fabrication; Frequency; Gallium arsenide; HEMTs; Transmission line matrix methods;
Conference_Titel :
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-1778-5
DOI :
10.1109/MWSYM.1994.335432
