A monolithic 2-52 GHz HEMT matrix distributed amplifier in coplanar waveguide technology

Author

Heilig, R. ; Hollmann, D. ; Baumann, G.

Author_Institution

Alcatel SEL, Pforzheim, Germany

fYear

1994

fDate

23-27 May 1994

Firstpage

459

Abstract

This paper discusses design, performance and fabrication of a two stages four sections GaAs monolithic matrix distributed amplifier covering the frequency range from 2 to 52 GHz. The achieved gain is about 9 dB and the return loss is better than 12 dB. The devices we used are 2/spl times/25 /spl mu/m, 0.2 /spl mu/m recessed gate AlGaAs HEMTs and the coplanar waveguide was the propagation medium for this broadband amplifier. The chip dimensions of the amplifier including the bias networks are 2.0 mm/spl times/2.5 mm.<>

Keywords

III-V semiconductors; MMIC; aluminium compounds; field effect integrated circuits; gallium arsenide; high electron mobility transistors; microwave amplifiers; wideband amplifiers; 0.2 micron; 12 dB; 2 to 52 GHz; 9 dB; AlGaAs; CPW technology; GaAs; HEMT matrix distributed amplifier; MIMIC; MM-wave IC; bias networks; broadband amplifier; coplanar waveguide; fabrication; monolithic amplifier; recessed gate AlGaAs HEMTs; two stage configuration; Broadband amplifiers; Coplanar waveguides; Distributed amplifiers; Fabrication; Frequency; Gallium arsenide; HEMTs; Transmission line matrix methods;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1994., IEEE MTT-S International

Conference_Location

San Diego, CA, USA

ISSN

0149-645X

Print_ISBN

0-7803-1778-5

Type

conf

DOI

10.1109/MWSYM.1994.335432

Filename

335432