Title :
A comparison study of ESD protection for RFICs: performance vs. parasitics
Author :
Haigang Feng ; Ke Gong ; Wang, A.Z.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Inst. of Technol., Chicago, IL, USA
Abstract :
This paper reports two advanced Electro-Static Discharge (ESD) protection structures suitable for RFICs and a comparison study of influences of ESD parasitic capacitance (C/sub ESD/) on high-speed circuits. For a 4 GHz ring-oscillator and a low-power high-speed op-amp circuits, it was observed that C/sub ESD/ may corrupt high-speed performance significantly and new ESD structures can recover the corruption by 80%.
Keywords :
MMIC oscillators; UHF integrated circuits; capacitance; electrostatic discharge; field effect MMIC; high-speed integrated circuits; operational amplifiers; protection; ESD parasitic capacitance; ESD protection structures; RFIC parasitics; RFIC performance; electrostatic discharge protection; high-speed circuits; low-power high-speed op amp circuits; ring-oscillator; Circuits; Design methodology; Electrostatic discharge; High performance computing; Laboratories; MOS devices; Neodymium; Parasitic capacitance; Protection; Testing;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2000. Digest of Papers. 2000 IEEE
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-6280-2
DOI :
10.1109/RFIC.2000.854456
