Title :
SiGe bipolar technologies for low phase noise RF and microwave applications
Author :
Regis, M. ; Borgarino, M. ; Bary, L. ; Llopis, O. ; Graffeuil, J. ; Gruhle, A. ; Kovacic, S. ; Plana, R.
Author_Institution :
Lab. d´Autom. et d´Anal. des Syst., CNRS, Toulouse, France
Abstract :
This paper presents an overview of the low frequency noise performances of both "abrupt" and "gradual" SiGe HBTs. We demonstrated that when appropriate device is used, 1/f corner noise frequency at 1 kHz is obtained. We further presented a correlation with phase noise performances which outperform those reported with III-V devices.
Keywords :
1/f noise; Ge-Si alloys; UHF bipolar transistors; UHF integrated circuits; bipolar MMIC; heterojunction bipolar transistors; integrated circuit noise; integrated circuit technology; microwave bipolar transistors; phase noise; reviews; semiconductor device models; semiconductor device noise; semiconductor materials; 1/f corner noise frequency; LF noise performances; SiGe; SiGe HBTs; SiGe bipolar technologies; low frequency noise performances; low phase noise RF applications; low phase noise microwave applications; Active noise reduction; Costs; Germanium silicon alloys; Low-frequency noise; Microwave devices; Microwave technology; Noise figure; Phase noise; Radio frequency; Silicon germanium;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2000. Digest of Papers. 2000 IEEE
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-6280-2
DOI :
10.1109/RFIC.2000.854458
