SiGe bipolar technologies for low phase noise RF and microwave applications

Author

Regis, M. ; Borgarino, M. ; Bary, L. ; Llopis, O. ; Graffeuil, J. ; Gruhle, A. ; Kovacic, S. ; Plana, R.

Author_Institution

Lab. d´Autom. et d´Anal. des Syst., CNRS, Toulouse, France

fYear

2000

fDate

10-13 June 2000

Firstpage

245

Lastpage

248

Abstract

This paper presents an overview of the low frequency noise performances of both "abrupt" and "gradual" SiGe HBTs. We demonstrated that when appropriate device is used, 1/f corner noise frequency at 1 kHz is obtained. We further presented a correlation with phase noise performances which outperform those reported with III-V devices.

Keywords

1/f noise; Ge-Si alloys; UHF bipolar transistors; UHF integrated circuits; bipolar MMIC; heterojunction bipolar transistors; integrated circuit noise; integrated circuit technology; microwave bipolar transistors; phase noise; reviews; semiconductor device models; semiconductor device noise; semiconductor materials; 1/f corner noise frequency; LF noise performances; SiGe; SiGe HBTs; SiGe bipolar technologies; low frequency noise performances; low phase noise RF applications; low phase noise microwave applications; Active noise reduction; Costs; Germanium silicon alloys; Low-frequency noise; Microwave devices; Microwave technology; Noise figure; Phase noise; Radio frequency; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2000. Digest of Papers. 2000 IEEE

Conference_Location

Boston, MA, USA

ISSN

1529-2517

Print_ISBN

0-7803-6280-2

Type

conf

DOI

10.1109/RFIC.2000.854458

Filename

854458