DocumentCode
2196400
Title
Low-power active mixer for Ku-Band application using SiGe HBT MMIC technology
Author
Schad, K.B. ; Schumacher, Hermann ; Schuppen, A.
Author_Institution
Dept. of Electron. Devices & Circuits, Ulm Univ., Germany
fYear
2000
fDate
10-13 June 2000
Firstpage
263
Lastpage
266
Abstract
The authors demonstrate the application of a scaled commercially available SiGe heterojunction bipolar transistor monolithic integrated circuit technology to active mixers at Ku Band. The realised Gilbert cell mixer circuits operate with less than 35 mW power consumption, and show a conversion gain above 8 dB and double sideband noise figures of 17 dB at 20 GHz.
Keywords
Ge-Si alloys; MMIC mixers; bipolar MMIC; heterojunction bipolar transistors; integrated circuit noise; low-power electronics; semiconductor materials; 17 dB; 20 GHz; Gilbert cell mixer circuits; HBT MMIC technology; Ku-band application; SiGe; conversion gain; double sideband noise figures; low-power active mixer; power consumption; Circuit simulation; Circuit topology; Epitaxial growth; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Libraries; MMICs; Resistors; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio Frequency Integrated Circuits (RFIC) Symposium, 2000. Digest of Papers. 2000 IEEE
Conference_Location
Boston, MA, USA
ISSN
1529-2517
Print_ISBN
0-7803-6280-2
Type
conf
DOI
10.1109/RFIC.2000.854462
Filename
854462
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