Preparation and electrical transport properties of n-type GaxPb1-xTe compounds

Author

Yin, Lingling ; Yan, Yonggao ; Tang, Xinfeng ; Liu, Haijun ; Zhang, Qingjie

Author_Institution

State Key Lab. of Adv. Technol. for Mater. Synthesis & Process., Wuhan Univ. of Technol., Wuhan

fYear

2007

fDate

3-7 June 2007

Firstpage

71

Lastpage

73

Abstract

N-type Ga_xPb_1-xTe(x = 0.01~0.05) compounds were prepared by melting reaction method, and the influence of Ga content on the electric properties of this compounds were investigated. The results showed that the carrier concentration increased while the Hall mobility decreased with increasing Ga content. The electrical conductivity also increased significantly with increasing Ga content.

Keywords

Hall mobility; IV-VI semiconductors; carrier density; electrical conductivity; gallium compounds; lead compounds; materials preparation; melting; Ga content; Ga_xPb_1-xTe; Hall mobility; carrier concentration; electrical conductivity; electrical transport; melting reaction method; Atmospheric measurements; Gallium; Hall effect; Lattices; Magnetic field measurement; Phonons; Superlattices; Temperature; Thermal conductivity; Thermoelectricity;

fLanguage

English

Publisher

ieee

Conference_Titel

Thermoelectrics, 2007. ICT 2007. 26th International Conference on

Conference_Location

Jeju Island

ISSN

1094-2734

Print_ISBN

978-1-4244-2262-3

Electronic_ISBN

1094-2734

Type

conf

DOI

10.1109/ICT.2007.4569426

Filename

4569426