Title :
Laser diode module for multi gigabit/sec lightwave transmission
Author :
Rego, A. C Bordeaux ; Coral, C. ; Carvalho, W., Jr. ; Caumo, J.R. ; Biazotto, A., Jr. ; De Faria, I.F., Jr.
Author_Institution :
Div. of Optoelectron., TELEBRAS CPqD, Campinas, Brazil
Abstract :
A bandwidth of over 6 GHz has been obtained in a InGaAsP-InP DCPBH laser diode module. A mesa structure was introduced to reduce the parasitic capacitance and leakage current. The microwave design and simulation show the influence of the thermoelectric cooler and the lead inductance. This LD module can be applied to 2.488 Gb/s optical transmission (SDH)
Keywords :
III-V semiconductors; cooling; gallium arsenide; gallium compounds; indium compounds; inductance; modules; optical communication equipment; semiconductor lasers; synchronous digital hierarchy; thermistors; thermoelectric devices; 2.488 Gbit/s; 6 GHz; DCPBH laser diode module; III-V semiconductor; InGaAsP-InP; LD module; SDH; bandwidth; laser diode module; lead inductance; leakage current reduction; lightwave transmission; mesa structure; microwave design; microwave simulation; optical transmission; parasitic capacitance reduction; thermoelectric cooler; Bandwidth; Diode lasers; Frequency; Heterojunctions; Indium phosphide; Leakage current; Packaging; Parasitic capacitance; Thermoelectricity; Threshold current;
Conference_Titel :
Microwave and Optoelectronics Conference, 1995. Proceedings., 1995 SBMO/IEEE MTT-S International
Conference_Location :
Rio de Janeiro
Print_ISBN :
0-7803-2674-1
DOI :
10.1109/SBMOMO.1995.509618
