DocumentCode :
2196549
Title :
Surface texture of Bi2Te3-based materials deformed under pressure-current heating
Author :
Orihashi, Masaki ; Noda, Yasutoshi ; Hasezaki, Kazuhiro
Author_Institution :
Sony EMCS Corp., Tokyo
fYear :
2007
fDate :
3-7 June 2007
Firstpage :
86
Lastpage :
89
Abstract :
Deformation of Bi2Te3-based materials was performed. The source disks with nominal compositions of (Bi0.25Sb0.75)2Te3, (Bi0.25Sb0.75)2(Te0.95Se0.05)3 and (Bi0.90Sb0.10)2(Te0.95Se0.05)3 were cut from the ingots grown by the vertical Bridgman method (VBM). The disks were deformed by either cold press (CP) or pressure current heating (PCH). The crystal structures of the deformed materials were identified to be hexagonal by X-ray diffraction. By using the diffraction intensities, the degree of the preferred orientation was estimated, where the texture of the (00middot l ) plane was detected in the thin surface layer regions of the (PCH) materials. The thermal stress acting to the Bi2Te3-based material was estimated by using physical properties at the heterogeneous contact between the graphite and the Bi2Te3-based material at PCH temperature. The extension stress was found to be large enough to deform the Bi2Te3-based material at the contact surface. Therefore, it can be concluded that the origin of the surface texture is attributed to the thermal stress at the heterogeneous contact. The resistivity measured parallel to the pressing axis was 1/6 less than that measured perpendicular to the axis. However the anisotropies in Seebeck coefficient and carrier concentration were not so clearly detected in these two directions. The power factors of the PCH deformed materials were comparable to those of the original as-grown ingot.
Keywords :
Seebeck effect; X-ray diffraction; bismuth alloys; carrier density; crystal growth from melt; crystal structure; deformation; electrical contacts; electrical resistivity; graphite; heat treatment; ingots; pressing; surface texture; tellurium alloys; thermal stresses; (Bi0.25Sb0.75)2(Te0.95Se0.05)3; (Bi0.25Sb0.75)2Te3; (Bi0.90Sb0.10)2(Te0.95Se0.05)3; Seebeck coefficient; X-ray diffraction; carrier concentration; cold press; deformation; extension stress; graphite; heterogeneous contact surface; hexagonal crystal structures; ingot growth; preferred orientation; pressure-current heating; resistivity; surface texture; thermal stress; thin surface layer; vertical Bridgman method; Bismuth; Conductivity; Crystalline materials; Heating; Pressing; Surface texture; Tellurium; Temperature; Thermal stresses; X-ray diffraction;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Thermoelectrics, 2007. ICT 2007. 26th International Conference on
Conference_Location :
Jeju Island
ISSN :
1094-2734
Print_ISBN :
978-1-4244-2262-3
Electronic_ISBN :
1094-2734
Type :
conf
DOI :
10.1109/ICT.2007.4569430
Filename :
4569430
Link To Document :
بازگشت