Novel HEMT structures for mixer applications

Author

Allam, R. ; Kolanowski, C. ; Théron, D. ; Crosnier, Y.

Author_Institution

Inst. d´´Electron. et de Microelectron. du Nord, Univ. des Sci. et Tech. de Lille Flandres Artois, Villeneuve d´´Ascq, France

Volume

1

fYear

1995

fDate

24-27 Jul 1995

Firstpage

209

Abstract

We present two new and original HEMT structures. They have been designed and realized for gate mixer applications. The first HEMT has a decoupling capacitor between the drain and the source. The integrated capacitor acts as a low-pass filter. The second HEMT presents a very nonlinear transconductance profile. The IF signal is provided by the mixing of the RF signal and the second harmonic of the LO signal. Thus, the required LO frequency is divided by 2

Keywords

HEMT integrated circuits; capacitors; electric admittance; field effect MIMIC; integrated circuit measurement; low-pass filters; millimetre wave mixers; nonlinear network synthesis; HEMT structures; IF signal; LO frequency; LO signal; RF signal; decoupling capacitor; drain; gate mixer applications; integrated capacitor; low-pass filter; millimeter wave HEMT mixers; mixer applications; nonlinear transconductance profile; second harmonic; source; Capacitors; Dielectric substrates; Frequency conversion; Gallium arsenide; HEMTs; Laboratories; Local oscillators; Millimeter wave transistors; RF signals; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Optoelectronics Conference, 1995. Proceedings., 1995 SBMO/IEEE MTT-S International

Conference_Location

Rio de Janeiro

Print_ISBN

0-7803-2674-1

Type

conf

DOI

10.1109/SBMOMO.1995.509622

Filename

509622